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this is information on a product in full production. july 2015 docid025849 rev 5 1/20 20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb trench gate field-stop igbt, hb series 650 v, 30 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.55 v (typ.) @ i c = 30 a ? tight parameters distribution ? safe paralleling ? low thermal resistance applications ? photovoltaic inverters ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate and field stop structure. the device is part of the new hb series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 to-3p 1 2 3 tab 1 111 2 3 to-3pf c (2, tab) e (3) g (1) table 1. device summary order code marking package packing stgfw30h65fb gfw30h65fb to-3pf tube STGW30H65FB gw30h65fb to-247 tube stgwt30h65fb gwt30h65fb to-3p tube www.st.com
contents stgfw30h65fb, STGW30H65FB, stgwt30h65fb 2/20 docid025849 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 to-3pf package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 to-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 to-3p package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid025849 rev 5 3/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247 to-3p to-3pf v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 120 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 260 58 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c =25c) 3.5 kv t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit to-3pf to-247 to-3p r thjc thermal resistance junction-case 2.60 0.58 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgfw30h65fb, STGW30H65FB, stgwt30h65fb 4/20 docid025849 rev 5 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a 1.55 2 v v ge = 15 v, i c = 30 a t j = 125 c 1.65 v ge = 15 v, i c = 30 a t j = 175 c 1.75 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -3659- pf c oes output capacitance - 101 - pf c res reverse transfer capacitance -76-pf q g total gate charge v cc = 520 v, i c = 30 a, v ge = 15 v, see figure 28 -149-nc q ge gate-emitter charge - 25 - nc q gc gate-collector charge - 62 - nc
docid025849 rev 5 5/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, see figure 27 -37-ns t r current rise time - 14.6 - ns (di/dt) on turn-on current slope - 1643 - a/s t d(off) turn-off delay time 146 - ns t f current fall time - 23 - ns e on (1) 1. energy losses include reverse recovery of the external diode. turn-on times and energy have been measured applying as freewheeling an external sic diode stpsc206w turn-on switching losses - 151 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 293 - j e ts total switching losses - 444 - j t d(on) turn-on delay time v ce = 400 v, i c = 30 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 27 -35-ns t r current rise time - 16.1 - ns (di/dt) on turn-on current slope - 1496 - a/s t d(off) turn-off delay time - 158 - ns t f current fall time - 65 - ns e on (1) turn-on switching losses - 175 - j e off (2) turn-off switching losses - 572 - j e ts total switching losses - 747 - j
electrical characteristics stgfw30h65fb, STGW30H65FB, stgwt30h65fb 6/20 docid025849 rev 5 2.1 electrical characteristics (curves) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) i c 60 40 20 0 0 2 v ce (v) 4 (a) 13 80 100 11v v ge =15 v 9v 13v gipg280120141156fsr i c 60 40 20 0 0 2 v ce (v) 4 (a) 13 80 100 11v v ge =15 v 9v 13v 7v gipg280120141206fsr figure 4. transfer characteristics figure 5. collector current vs. case temperature for to-247 and to-3p figure 6. collector current vs. case temperature for to-3pf figure 7. v ce(sat) vs. junction temperature i c 60 40 20 0 7 11 v ge (v) (a) 913 80 100 v ce =10 v t j = 25 c t j = 175 c gipg280120141330fsr i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 125 150 v ge 15v, t j 175 c gipg280120141346fsr i c 30 20 10 0 0 50 t c (c) 75 (a) 25 100 125 150 v ge 15v, t j 175 c 40 gipd060320141418fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) (v) 50 100 150 2.2 2.0 v ge = 15v i c = 60a i c = 30a i c = 15a gipg280120141440fsr
docid025849 rev 5 7/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb electrical characteristics figure 8. power dissipation vs. case temperature for to-247 and to-3p figure 9. power dissipation vs. case temperature for to-3pf p tot 150 100 0 0 50 t c (c) 75 (w) 25 100 125 150 50 200 175 250 v ge 15v, t j 175 c gipg280120141353fsr p tot 30 20 0 0 50 t c (c) 75 (w) 25 100 125 150 10 40 50 v ge 15v, t j 175 c 60 gipd060320141444fsr figure 10. forward bias safe operating area for to-247 and to-3p figure 11. forward bias safe operating area for to-3pf i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c = 25c, t j 175 c; v ge =15v) gipg280120141450fsr i c 100 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c = 25 c, t j 175c; v ge =15v) gipd060320141531fsr figure 12. collector current vs. switching frequency for to-247 and to-3p figure 13. collector current vs. switching frequency for to-3pf 0 10 20 30 40 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 50 60 gipg280120141713fsr 0 10 20 30 40 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipd060320141543fsr
electrical characteristics stgfw30h65fb, STGW30H65FB, stgwt30h65fb 8/20 docid025849 rev 5 figure 14. normalized v ge(th) vs. junction temperature figure 15. normalized v (br)ces vs. junction temperature v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 v ce = v ge i c = 1ma am16060v1 v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2ma am16059v1 figure 16. switching losses vs temperature figure 17. switching losses vs gate resistance e (j) 400 200 0 20 t j (c) 40 60 80 100 600 v cc = 400v, v ge = 15v r g = 10, i c = 30a 120 e on e off 140 160 gipg280120141531fsr e (j) 420 20 3 r g () 10 17 24 620 v cc = 400v, v ge = 15v i c = 30a, t j = 175 c 31 e on e off 38 45 220 820 1020 gipg280120141535fsr figure 18. switching losses vs collector curren t figure 19. switching losses vs collector emitter voltage e (j) 400 200 0 0 i c (a) 20 40 60 600 v cc = 400v, v ge = 15v r g = 10, t j = 175c e on e off 1000 800 1200 gipg280120141605fsr e (j) 400 200 0 150 v ce (v) 250 350 450 600 t j = 175c, v ge = 15v r g = 10, i c = 30a e on e off 800 gipg280120141609fsr
docid025849 rev 5 9/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb electrical characteristics figure 20. switching times vs collector current figure 21. switching times vs gate resistance t i c (a) (ns) 0 10 20 1 30 t f t j = 175c, v ge = 15v, r g = 10, v cc = 400v t doff 10 t r t don 40 50 100 gipg100720141533fsr t 10 r g () (ns) 01020 100 30 t f t j = 175c, v ge = 15v, i c = 30a, v cc = 400v 40 t don t doff t r gipg100720141549fsr figure 22. capacitance variations figure 23. v ce(sat) vs. collector current c 10 v ce (v) (pf) 0.1 1 10 c ies 100 1000 c oes c res 100 gipg090720141358fsr v ce(sat) 1.6 1.4 1.2 0 30 i c (a) (v) 45 60 2.2 2.0 1.8 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 gipg280120141446fsr figure 24. gate charge vs. gate-emitter voltage v ge (v) 4 2 0 0 q g (nc) 40 80 120 160 6 8 10 12 14 v cc = 520v, i c = 30a i g = 1ma 16 gipg280120141455fsr
electrical characteristics stgfw30h65fb, STGW30H65FB, stgwt30h65fb 10/20 docid025849 rev 5 figure 25. thermal impedance for to-247 and to-3p 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid025849 rev 5 11/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb electrical characteristics figure 26. thermal impedance for to-3pf 10 -5 10 -4 10 -3 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 10 -2 10 -1 10 0 zthtof3t_a
test circuits stgfw30h65fb, STGW30H65FB, stgwt30h65fb 12/20 docid025849 rev 5 3 test circuits figure 27. test circuit for inductive load switching figure 28. gate charge test circuit figure 29. switching waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
docid025849 rev 5 13/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb package information 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-3pf package information figure 30. to-3pf package outline 7627132_d
package information stgfw30h65fb, STGW30H65FB, stgwt30h65fb 14/20 docid025849 rev 5 table 7. to-3pf package mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
docid025849 rev 5 15/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb package information 4.2 to-247 package information figure 31. to-247 package outline b+
package information stgfw30h65fb, STGW30H65FB, stgwt30h65fb 16/20 docid025849 rev 5 table 8. to-247 package mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid025849 rev 5 17/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb package information 4.3 to-3p package information figure 32. to-3p package outline 8045950_b
package information stgfw30h65fb, STGW30H65FB, stgwt30h65fb 18/20 docid025849 rev 5 table 9. to-3p package mechanical data dim. mm min. typ. max. a 4.60 4.80 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5 5.20 q1 3.60 3.80 4
docid025849 rev 5 19/20 stgfw30h65fb, STGW30H65FB, stgwt30h65fb revision history 5 revision history table 10. document revision history date revision changes 28-jan-2014 1 initial release. 24-feb-2014 2 updated units in table 6: switching characteristics (inductive load) for e ts , and updated note 1. update figure 16: switching losses vs temperature , figure 17: switching losses vs gate resistance and figure 18: switching losses vs collector current . updated title and features in cover page. minor text changes. 10-mar-2014 3 added device in to-3pf. updated table 1: device summary , table 2: absolute maximum ratings , table 3: thermal data . added figure 6: collector current vs. case temperature for to-3pf , figure 9: power dissipation vs. case temperature for to-3pf , figure 11: forward bias safe operating area for to-3pf and figure 26: thermal impedance for to-3pf . updated section 4: package information . 20-may-2014 4 updated table 2: absolute maximum ratings . 28-jul-2015 5 text and formatting changes throughout document updated table 2: absolute maximum ratings updated section 2.1: electrical characteristics (curves) updated section 3: test circuits updated section 4.2: to-247 package information updated section 4.3: to-3p package information
stgfw30h65fb, STGW30H65FB, stgwt30h65fb 20/20 docid025849 rev 5 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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